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Press release
2019年03月27日 15時00分
Source:
Mitsubishi Electric
三菱電機、パワー半導体「1200V SiC-SBD」発売のお知らせ
電源システムの低消費電力化・小型化に貢献
東京, 2019年03月27日 - (JCN Newswire) - 三菱電機株式会社は、太陽光発電装置やEV用充電器などの電源システムの低消費電力化・小型化に貢献するパワー半導体の新製品として、SiC※1を用いた1200V耐圧の「1200V SiC-SBD※2」5タイプを2019年6月にサンプル提供を開始し、2020年1月から順次発売します。なお、本製品は「TECHNO-FRONTIER 2019第37回モータ技術展」(4月17日~19日、於:幕張メッセ)、「PCIM Europe 2019」(5月7日~9日、於:ドイツ連邦共和国・ニュルンベルク)、「PCIM Asia 2019」(6月26日~28日、於:中華人民共和国・上海)に出展します。
新製品の特長
1. SiCの採用で、低消費電力化・小型化に貢献
- SiCを用いることでSi(シリコン)と比べてスイッチング損失を大幅に削減し、電力損失を約21%低減※3
- 高速スイッチングが可能となり、リアクトルなど周辺部品の小型化に貢献
2. JBS構造の採用により、高信頼性に寄与
- pn接合とショットキー接合を組み合わせたJBS※4構造を採用
- JBS構造により高サージ耐量を実現することで、高信頼性に寄与
3. さまざまな用途に対応する5製品をラインアップ
- 一般的なTO-247パッケージに加え、絶縁距離を拡大したTO-247-2パッケージの採用により民生品をはじめ産業などのさまざまな用途に対応
- AEC-Q101※5に準拠した製品(BD20120SJ)もラインアップし、車載用途にも対応
本リリースの詳細は下記URLをご参照ください。
http://www.mitsubishielectric.co.jp/news/2019/0327-b.html
概要:三菱電機株式会社
詳細は
http://www.mitsubishielectric.co.jp
をご覧ください。
Source: Mitsubishi Electric
セクター: エレクトロニクス
Copyright ©2026 JCN Newswire. All rights reserved. A division of Japan Corporate News Network.
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