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Press release
2019年10月01日 14時00分
Source:
Mitsubishi Electric
三菱電機、独自の電界緩和構造を採用したトレンチ型SiC-MOSFETを開発
パワーエレクトロニクス機器のさらなる省エネ化・小型化に貢献
東京, 2019年10月01日 - (JCN Newswire) - 三菱電機株式会社は、1500V以上の耐圧性能と世界最高レベル※1の素子抵抗率1cm2あたり1.84ミリオームを両立するパワー半導体素子として、独自の電界緩和構造を採用したトレンチ型※2SiC※3 -MOSFET※4を開発しました。
本パワー半導体素子をパワー半導体モジュールに搭載することで、パワーエレクトロニクス機器のさらなる省エネ化や小型化に貢献します。
なお、本開発成果の詳細は、「ICSCRM※5 2019（9月29日~10月4日、於：国立京都国際会館）」で本日（9月30日）発表します。
開発の特長
1. 独自の電界緩和構造により、素子の信頼性を確保
- 独自の電界緩和構造により、トレンチ構造で、1500V以上の耐圧性能を保持しながら、電界強度を従来のプレーナー型構造並みに抑制し、素子の信頼性を確保
- 斜め方向からアルミニウムを注入することにより形成された側面接地部にて電界緩和層とソース電極を電気的に接続し、高速スイッチング動作を実現
2. 局所的な高濃度層形成により、世界最高レベルの低抵抗化を実現
- 斜め方向から窒素を高濃度に注入することにより、より通電しやすい高濃度層を局所的に形成して電流経路の抵抗を低減
- 素子抵抗率を半減※6し、世界最高レベルの1cm2あたり1.84ミリオームを実現
- 発熱の抑制により、パワーエレクトロニクス機器の省エネ化・小型化に貢献
今後の展開
パワー半導体素子のさらなる特性向上を図るとともに、長期信頼性評価を進め、2021年度以降の実用化を目指します。
本リリースの詳細は下記をご参照ください。
http://www.mitsubishielectric.co.jp/news/2019/0930.html
概要：三菱電機株式会社
詳細は
http://www.mitsubishielectric.co.jp
をご覧ください。
Source: Mitsubishi Electric
セクター: エレクトロニクス
Copyright ©2026 JCN Newswire. All rights reserved. A division of Japan Corporate News Network.
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